64GB (2x32GB) DDR4 3200MHz (PC 26500) SO-DIMM Dual channel

Product Info

64GB (2x32GB) DDR4 3200MHz (PC 26500) SO-DIMM Dual channel

DDR4 is the newest iteration in DRAM, loaded with new features that improve reliability, speed, power, and stacking capabilities for the enterprise, micro-server, ultrathin, tablet markets, automotive and embedded markets—industrial, consumer and connected home applications. With data rates reaching 2400 Mb/s, DDR4 increases performance up to 50% over DDR3. DDR4 also delivers a 20% reduction in voltage over DDR3—however, when DDR4’s additional power-saving features are taken into account, total overall power savings versus DDR3 can be as much as 35%.

With DDR3 reaching its limits in a world that demands higher performance and increased bandwidth, a new generation of DDR SDRAM has arrived. DDR4 delivers higher performance, higher DIMM capacities, improved data integrity and lower power consumption.

Achieving more than 2Gbps per pin and consuming less power than DDR3L (DDR3 Low Voltage), DDR4 provides up to 50 percent increased performance and bandwidth while decreasing the power consumption of your overall computing environment. This represents a significant improvement over previous memory technologies and a power savings up to 40 percent.

In addition to optimized performance and greener, low-cost computing, DDR4 also provides cyclic redundancy checks (CRC) for improved data reliability, on-chip parity detection for integrity verification of ‘command and address’ transfers over a link, enhanced signal integrity and other robust RAS features.

Description	DDR3	DDR4	Advantage
Chip Densities	512Mb-8Gb	4Gb-16Gb	Larger DIMM Capacities
Data Rates	800Mb/s – 2133Mb/s	1600Mb/s – 3200Mb/s	Migration to Higher-Speed I/O
Voltage	1,5V	1,2V	Reduced Memory Power Demand
Low Voltage Standard	Yes (DDR3L at 1.35V)	Anticipated at 1.05V	Memory Power Reductions
Internal Banks	8	16	More Banks
Bank Groups (BG)	0	4	Faster Burst Accesses
VREF inputs	2 – DQs and CMD/ADDR	1 – CMD/ADDR	VREFDQ Now Internal
tCK – DLL Enabled	300MHz – 800MHz	667MHz – 1,6GHz	Higher Data Rates
tCK – DLL Disabled	10MHz – 125MHz (optional)	Undefined to 125MHz	DLL-off now fully supported
Read Latency	AL + CL	AL + CL	Expanded Values
Write Latency	AL + CWL	AL + CWL	Expanded Values
DQ Driver (ALT)	40 Ù	48 Ù	Optimal for PtP Applications
DQ Bus	SSTL15	POD12	Less I/O Noise and Power
RTT Values (in Ù)	120, 60, 40, 30, 20	240, 120, 80, 60, 48, 40, 34	Support for Higher Data Rates
RTT Not Allowed	READ Bursts	Disables during Read Bursts	Ease-of-Use
ODT Modes	Nominal, Dynamic	Nominal, Dynamic, Park	Add’l Control Mode; OTF Value Change
ODT Control	ODT Signaling Required	ODT Signaling NOT Required	Ease of ODT Control; Allows Non-ODT Routing, PtP Apps
Multi-Purpose Register	Four Registers – 1 Defined, 3 RFU	Four Registers – 3 Defined, 1 RFU	Provides Additional Specialty Readout
DIMM Types	RDIMM, LRDIMM, UDIMM, SODIMM	RDIMM, LRDIMM, UDIMM, SODIMM
DIMM Pins	240 (R, LR, U); 204 (SODIMM)	288 (R, LR, U); 260 (SODIMM)
RAS	ECC	CRC, Parity, Addressability, GDM	More RAS features; improved data integrity

PLEASE NOTE: Configuration and pricing information above is estimated and presented for your reference only. All pricing and shipping information is subject to change without notice. Final order detailed information and total amount, including tax and shipping, will be provided upon comletion of your online order. Magic Micro, Inc. is not responsible for typographical or other errors or omissions regarding prices or other information. Products displayed are available to US customers who take delivery in the 50 United States. All sales are subject to Magic Micro's Terms and Conditions of Sale.